 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| e PTB 20031 40 Watts, 420-470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 420-470 MHz Class AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 60 Output Power (Watts) 50 40 30 20 10 0 0 2 4 6 8 10 200 31 LOT CO DE VCC = 24 V ICQ = 200 mA f = 470 MHz Input Power (Watts) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 10.0 175 1.0 -40 to +150 1.0 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/23/98 PTB 20031 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 50 3.5 20 Typ 30 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420-470 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420-470 MHz) Intermodulation Distortion (VCC = 24 Vdc, Pout = 40 W(PEP), ICQ = 200 mA, f1 = 469 MHz, f2 = 470 MHz) Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420-470 MHz --all phase angles at frequency of test) Symbol Gpe C IMD Min 8.0 50 -- Typ 9.5 -- -22 Max -- -- -- Units dB % dBc -- -- 5:1 -- Typical Performance Gain & Efficiency vs. Frequency 12 11 (as measured in a broadband circuit) 80 70 60 Gain (dB) 10 9 8 7 6 410 Gain (dB) 50 40 30 20 470 VCC = 24 V ICQ = 200 mA Pout = 30 W 420 430 440 450 460 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20031 Uen Rev. D 09-23-98 2 9/23/98 Efficiency (%) Efficiency (%) |
Price & Availability of PTB20031
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |